| PART |
Description |
Maker |
| ZL50110 ZL50114 ZL50111 ZL50114GAG ZL50110GAG ZL50 |
128, 256 and 1024 Channel CESoP Processors
|
ZARLINK[Zarlink Semiconductor Inc]
|
| IDT72210 IDT72210L12TC IDT72210L12TCB IDT72210L12T |
CMOS SyncFIFOO 64 x 8 256 x 8 512 x 8 1024 x 8 2048 x 8 and 4096 x 8
Dual High Output Current Operational Amplifier 8-SOIC -40 to 85
Current-Mode PWM Controller 8-PDIP 0 to 70
CMOS SyncFIFOO 64 x 8, 256 x 8, 512 x 8, 1024 x 8, 2048 x 8 and 4096 x 8 的CMOS SyncFIFOO 64 × 856 × 812 × 8024 × 8048 × 8096 × 8
CMOS SyncFIFOO 64 x 8, 256 x 8, 512 x 8, 1024 x 8, 2048 x 8 and 4096 x 8 1K X 8 OTHER FIFO, 25 ns, CDIP28
CMOS SyncFIFOO 64 x 8, 256 x 8, 512 x 8, 1024 x 8, 2048 x 8 and 4096 x 8 2K X 8 OTHER FIFO, 25 ns, CDIP28
CMOS SyncFIFOO 64 x 8, 256 x 8, 512 x 8, 1024 x 8, 2048 x 8 and 4096 x 8 4K X 8 OTHER FIFO, 25 ns, CDIP28
High-Performance Current-Mode PWM Controller 14-SOIC 0 to 70 64 X 8 OTHER FIFO, 12 ns, CDIP28
CMOS SyncFIFOO 64 x 8, 256 x 8, 512 x 8, 1024 x 8, 2048 x 8 and 4096 x 8 256 X 8 OTHER FIFO, 10 ns, CDIP28
CMOS SyncFIFOO 64 x 8, 256 x 8, 512 x 8, 1024 x 8, 2048 x 8 and 4096 x 8 1K X 8 OTHER FIFO, PDIP28
CMOS SyncFIFOO 64 x 8, 256 x 8, 512 x 8, 1024 x 8, 2048 x 8 and 4096 x 8 512 X 8 OTHER FIFO, 10 ns, CDIP28
CMOS SyncFIFOO 64 x 8, 256 x 8, 512 x 8, 1024 x 8, 2048 x 8 and 4096 x 8 的CMOS SyncFIFOO 64 × 8256 × 812 × 81024 × 8048 × 8096 × 8
Dual High Output Current Operational Amplifier 8-PDIP -40 to 85
|
Integrated Device Techn...
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
INTEGRATED DEVICE TECHNOLOGY INC
|
| MBM29F200BA |
2 M (256 K ×8/128 K ×16) BIT Flash Memory(2 M (256 K ×8/128 K ×16)V 电源电压闪速存储器) 2米（256亩8 / 128亩16）位闪存米（256亩8 / 128亩16）位V的电源电压闪速存储器
|
Fujitsu, Ltd.
|
| S29PL127N65GAWW02 S29PL127N65GAW003 S29PL127N65GAI |
256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory 8M X 16 FLASH 3V PROM, 65 ns, PBGA64
256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory 256/128/128字节6/8/8 M中的x 16位）.0伏的CMOS只同步读/写，页模式闪
256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory 8M X 16 FLASH 3V PROM, 70 ns, PBGA64
256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory 16M X 16 FLASH 3V PROM, 70 ns, PBGA84
256/128/128 Mb (16/8/8 M x 16-Bit) CMOS, 3.0 Volt-only Simultaneous Read/Write, Page-Mode Flash Memory 16M X 16 FLASH 3V PROM, 65 ns, PBGA84
|
Spansion, Inc.
Spansion Inc.
SPANSION LLC
|
| IDT72211L12J IDT72201L20L |
CMOS SyncFIFO 64 X 9, 256 x 9, 512 x 9, 1024 X 9, 2048 X 9 and 4096 x 9 512 X 9 OTHER FIFO, PQCC32
CMOS SyncFIFO 64 X 9, 256 x 9, 512 x 9, 1024 X 9, 2048 X 9 and 4096 x 9 256 X 9 OTHER FIFO, CQCC32
|
Integrated Device Technology, Inc.
|
| PCF8594C-2 PCF8594C-2P PCF8594C-2T PCF8598C-2 PCF8 |
256 to 1024 x 8-bit CMOS EEPROMs with I2C-bus interface
PCF85xxC-2 family 256 to 1024 ? 8-bit CMOS EEPROMs with I2C-bus interface
|
PHILIPS[Philips Semiconductors]
Integrated Circuit Systems
|
| IS23SC4418 IS23SC4428 |
1024 x 8 Bits of EEPROM With Programmable Write Protection For Each Byte.(1024 x 8位，每个字节带可编程写保护的EEPROM) 1024 × 8位的EEPROM，具有可编程写保护每个字节。（1024 × 8位，每个字节带可编程写保护的EEPROM中）
1024 x 8 Bits of EEPROM With Programmable Write Protection For Each Byte And Two Bytes of Programmable Security Code(1024 x 8位，每个字节带可编程写保护，2字节可编程安全密码的EEPROM) 1024 × 8位的EEPROM，具有可编程写保护对于每一个字节，两个字节可编程保障法024 × 8位，每个字节带可编程写保护，2字节可编程安全密码的EEPROM中）
|
GTM, Corp.
Integrated Silicon Solution, Inc.
|
| S29GL064M90FCIR00 S29GL064M90BCIR82 S29GL064M90FAI |
256,128,64,32,Megabit 3.0 Volt-only Page Mode Flash Memory featuring 0.23 m MirrorBit Process Technology
256,128,64,32,Megabit 3.0 Volt-only Page Mode Flash Memory featuring 0.23 レm MirrorBit Process Technology 256,128,64,32.0兆伏安只页面模式闪存具有0.23レ米MirrorBit工艺技
256,128,64,32,Megabit 3.0 Volt-only Page Mode Flash Memory featuring 0.23 レm MirrorBit Process Technology 4M X 16 FLASH 3V PROM, 90 ns, PDSO56
256,128,64,32,Megabit 3.0 Volt-only Page Mode Flash Memory featuring 0.23 レm MirrorBit Process Technology 4M X 16 FLASH 3V PROM, 90 ns, PDSO48
256,128,64,32,Megabit 3.0 Volt-only Page Mode Flash Memory featuring 0.23 ?? MirrorBit Process Technology
|
Spansion Inc.
Spansion, Inc.
SPANSION LLC
|
| IDT72221L15J IDT72221L15JI IDT72221L15PF IDT72221L |
CMOS SyncFIFOO 64 X 9, 256 x 9, 512 x 9, 1024 X 9, 2048 X 9 and 4096 x 9
|
IDT[Integrated Device Technology]
|
| SLA24C01-D-3/P SLA24C02-D-3/P SLA24C02-S-3/P SLA24 |
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 256 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 256 X 8 I2C/2-WIRE SERIAL EEPROM, PDIP8
The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 128 X 8 I2C/2-WIRE SERIAL EEPROM, PDIP8
1/2 Kbit 128/256 x 8 bit Serial CMOS EEPROMs, I2C Synchronous 2-Wire Bus
|
SIEMENS A G
SIEMENS AG
Siemens Semiconductor Group
|
| AM29LV200BB-120WAC AM29LV200BB-120WAF AM29LV200BB- |
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 2兆位56Kx8Bit/128Kx16位）.0伏的CMOS引导扇区闪存
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 2兆位256Kx8Bit/128Kx16位）.0伏的CMOS引导扇区闪存
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 128K X 16 FLASH 3V PROM, 90 ns, PBGA48
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 128K X 16 FLASH 3V PROM, 70 ns, PBGA48
|
Advanced Micro Devices, Inc.
|
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